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Negative Bias Temperature Instability (NBTI)
Electronic Prognostic Unit (EPU)™
Negative Bias Temperature Instability (NBTI) is an effect that causes a gradual shift in transistor threshold voltage (VT). It manifests as an absolute drain current IDsat decrease, transconductance gm decrease, and absolute threshold voltage (VT) increase. NBTI is primarily observed in p-channel MOSFETs when the gate-to-source voltage is negative.
NBTI is caused by charged defect densities in the gate oxide interface region. The VT shift is dependent on voltage stress on the gate terminal, temperature, and the duty cycle of the stressing voltage. Typical stress levels required to induce NBTI are temperatures in the 100-250 ºC range and electric field conditions across the oxide region higher than 6 MV/cm.
NBTI Layout