- Semiconductor
- Prognostics
- nanoDFM
- instaCell
Products
Radiation-Hardened Design Services
Radiation can cause leakage and threshold voltage shifts in ICs. To mitigate these problems, Ridgetop has extensive experience in the design of radiation-hardened components for critical applications. This includes satisfactorily addressing the following rad effects:
- Single Event Effects (SEE)
- Total Ionizing Dose (TID)
- Transient Dose Rate (TDR)
Examples of Ridgetop design services in the radiation hardened areas, including Rad Hard by Design (RHBD) methods and Rad Hard by Process (RHBP):
- High speed, high linearity analog to digital converters
- Design using newer advanced processes such as Silicon on Insulator (SOI), Silicon on Sapphire (SOS) and advanced FlexFET™ processes. (FlexFET is a trademark of American Semiconductor)
Ridgetop customers for rad hard design services have included the Missile Defense Agency, Naval Sea Systems Command (NAVSEA), NASA and the US Department of Energy. Prime Contractors for those agencies also populate our customer list.