Download a TDDB overview
The Ridgetop TDDB EPU is a pad-limited CMOS leakage detection cell.
Its unique and proprietary architecture behaves as an early-warning “sentinel” of upcoming gate oxide failure. The amount of pre-warning is dependent on the prognostic distance, which depends on the area and the stress voltage.
The Ridgetop TDDB EPU is designed to be co-located with the host circuit and subjected to the same environmental stresses. These environmental stresses contribute to aging of the circuit and can include over- and under-voltage conditions, transient spikes, radiation exposure, humidity, and excessive temperature conditions.
Features and Benefits
- Alerts upcoming gate oxide failure condition due to TDDB
- Consumes approximately 600 microwatts of power
- Efficient size at 500 μm2 at the 0.13 micron process size
- Scalable using design equation
- Detects both hard and soft breakdowns
