The Ridgetop TDDB prognostic cell is a pad-limited CMOS leakage detection cell. It is part of the Sentinel Silicon™ library of prognostic (“canary”) cells.
Its unique and proprietary architecture behaves as an early-warning “sentinel” of upcoming gate oxide failure. The amount of pre-warning is dependent on the prognostic distance, which depends on the area and the stress voltage.
The Ridgetop TDDB prognostic cell is designed to be co-located with the host circuit and subjected to the same environmental stresses. These environmental stresses contribute to aging of the circuit and can include over- and under-voltage conditions, transient spikes, radiation exposure, humidity, and excessive temperature conditions.
Features and Benefits
- Alerts upcoming gate oxide failure condition due to TDDB
- Consumes approximately 600 microwatts of power
- Efficient size at 500 μm2 at the 0.13 micron process size
- Scalable using design equation
- Detects both hard and soft breakdowns
TDDB layout – click to enlarge
For more information, please click here or follow the links below.
Product Brief
Datasheet
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White Paper
Ridgetop is certified as category 1A under the Defense Microelectronics Activity (DMEA) as part of the Trusted Supplier Program. Ridgetop has history of designing analog and mixed signal ICs for demanding applications in space satellites that are subjected to extreme temperatures and radiation. Our designs have utilized bulk CMOS, CMOS-SOI, and SiGe at process geometries down to 28 nm channel lengths. Radiation hardness is also a concern, and Ridgetop has addressed those requirements as well. A recent Ridgetop design was delivered to ON Semiconductor for the U.S. Air Force STELLAR Star Tracker.
Under contract to NASA, Ridgetop designed an effective 3-axis wireless rotational sensor. The RotoSense™ sensor has been tested on fast-spinning pinion gears on helicopter gear boxes, and also rolling stock for railroad safety improvements.